Ion Implant Dose Dependence

ancoex02.in : Ion Implant Dose Dependence

Requires: SSuprem 4, MC Implant
Minimum Versions: Athena 5.21.2.R

This example calculated 10 keV Si implant profiles in GaAs for 3 implant doses: 1e14, 5e14, and 2.5e15 ions/cm**3. The damage accumulation with the implant dose decreases the number of channeling ions which results in relatively smaller channeling tails.

To load and run this example, select the Load example button. This action will copy all associated files to your current working directory. Select the DeckBuild run button to execute the example.