GaAs IC Structure

thermalex04.in : GaAs IC Structure

Requires: DevEdit 3D/Thermal 3D
Minimum Versions: Atlas 5.22.1.R

This example runs thermal simulation of a GaAs IC structure with three heat producing devices.

The device consists of three GaAs regions defined as heat sources in a GaAs substrate. A single thermal contact is applied to the bottom of the substrate region. The structure is prepared using DevEdit 3D in a similar manner to the previous examples in this section.

In Atlas, the material statement is used to define the power output of two of the three GaAs regions. The substrate is defined as having a temperature dependent thermal conductivity according to the tcon.power parameter.

This example is designed to show the effect of the heating produced by neighboring devices on a non-heat producing transistor. The third GaAs region (defined as region #4) has no heat power output. However the solution file will show that the device is heated by conduction from the neighboring devices.

To load and run this example, select the Load example button in DeckBuild. This will copy the input file and any support files to your current working directory. Select the run button to execute the example.