Al implant in 4H-SiC in [0001] Crystallographic Direction.

sicex05.in : Al implant in 4H-SiC in [0001] Crystallographic Direction.

Requires: SSuprem 4, MC Implant
Minimum Versions: Athena 5.22.0.R

This example show very pronounced channeling effects for on-axis implantation in 4H-SiC. The Al implant energy is 60 keV and implant direction condition corresponds to on-axis implantation in [0001] crystallographic direction. The experimental profiles are taken from Wong-Leung et al. J. Appl. Phys. vol.93, pp 8914-8916, 2003.

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