Anisotropic Mobility Characteristics of a SiC T-MOSFET

sicex02.in : Anisotropic Mobility Characteristics of a SiC T-MOSFET

Requires: DevEdit, Blaze, SiC
Minimum Versions: Atlas 5.22.1.R

This example demonstrates the simulation of the forward characteristics of a trench gated MOS power transistor. Three simulations are performed to show the effect of the crystallographic plane mobility modeling on the device characteristics.

This device is created entirely within DevEdit and is composed of SiC, silicon dioxide, aluminum and polysilicon within a simulation domain of 6um x 16um. The MOSFET has been created with a gate oxide of 800A and an N-type polysilicon gate.

The device simulations consist of the ID-VD characteristics at a gate voltage of 20V. Three characteristics were then obtained for different mobility models.

First, the standard isotropic mobility model was used where the SiC mobility coefficients were defined for the <1100> plane which is the high mobility plane.

Secondly, the standard isotropic mobility model was used where the SiC mobility coefficients were defined for the <1000> plane which is the low mobility plane.

Thirdly, an anisotropic mobility model was used where the SiC mobility coefficients were defined for both the <1100> and <1000> planes.

The anisotropic model is applied by specifying a default set of mobility coefficients which apply everywhere. Then on the second mobility statement the n.angle parameter specifies the mobility at 90 degrees to the horizontal. This switches on the anisotropic mobility model.

To load and run this example, select the Load example button in DeckBuild. This will copy the input file and any support files to your current working directory. Select the run button to execute the example.