CV Analysis Of Thin Gate Oxide NMOS Capacitor

quantumex02.in : CV Analysis Of Thin Gate Oxide NMOS Capacitor

Requires: S-Pisces/Quantum
Minimum Versions: Atlas 5.22.1.R

This example demonstrates the CV characteristics of a p-type substrate MOS capacitor with a nominal 30A gate oxide. The example shows:

  • Calculation of CV curves using ac Analysis
  • Use of the Quantum moments quantum model for holes
  • Difference between classical and quantum gate thickness
  • Classical and Quantized electron density

A simple 1D MOS capacitor is created in this example with a 30A gate oxide thickness. An AC analysis is performed on the device firstly with the classical simulation and the with the quantum model swtiched on.

The quantum model for holes is activated by using the p.quantum switch in the models statement for holes. Note that this activates a quantum moments model which uses a quantum temperature calculation. This quantum temperature can be viewed in the structure files. Also, the cutline created in TonyPlot can be used to examine the classical and quantum hole concenration differences in the structure.

To load and run this example, select the Load example button in DeckBuild. This will copy the input file and any support files to your current working directory. Select the run button to execute the example.