Quantum Tunnelling in a Silicon Structure with a non-linear junction profile.

quantumex11.in : Quantum Tunnelling in a Silicon Structure with a non-linear junction profile.

Requires: S-Pisces
Minimum Versions: Atlas 5.22.1.R

This example demonstrates:

  • Example of a QTREGION statement applied to a non-linear junction profile.
  • Example of BBT.FORWARD and BBT.REVERSE parameters.

In this example the QTREGION statement is used to set up a mesh suitable for tunneling calculations. The device has two junctions, one which is a straight line and the other which is curved. Multiple QTREGION statements are used to create two QTREGIONs. The contour of the junction is approximately followed and the SNRM.BEG and SNRM.END parameters are used to match the QTREGION meshspacing with the device mesh spacing in the direction perpendicular to the tunneling direction is approximately normal to the junction. An example of F.RESOLUTION is given in the QTREGION for the linear junction. This takes the relative mesh spacing in the tunneling direction from a data file.

The curved junction is forward biased, the optional BBT.FORWARD parameter is used. The linear junction is then reverse biased, the BBT.FORWARD parameter is cleared and the optional BBT.REVERSE parameter is set. These two parameters determine where the tunnel current is injected into the device. BBT.FORWARD injects at the edges of the QTREGIONS, and BBT.REVERSE averages over the junction itself. These schemes can be more stable than the default option, which injects the current at the position it actually occurs in the model.

From the LOG files we see that there is a forward bias tunneling current, and from the Structure files we see exactly where the current is injected.

To load and run this example, select the Load example button in DeckBuild. This will copy the input file and any support files to your current working directory. Select the run button to execute the example.