Trench Formation and Planarization

anex06.in : Trench Formation and Planarization

Requires: SSuprem 4, Elite
Minimum Versions: Athena 5.21.2.R

This example shows the use of Elite to model a trench process using a unique self-aligned process. The process begins with spacer formation over a patterned sandwich of oxide and nitride layers. Next, oxidation is performed using the spacer as a mask. This creates a bird's beak that extends under the spacer. After etching the nitride, an opening is created by etching enough oxide to remove the bird's beak. This opening is used to pattern a trench etch. The resulting trench is oddly shaped because of the simultaneous erosion of the silicon and the lateral erosion of the masking oxide.

Following the trench formation, an oxide layer is grown. The structure is then filled with oxide. Planarizing photoresist is deposited next.

Finally, the structure is planarized by eroding all materials with a similar etch rate. The sequence of structures is then plotted using TonyPlot .

To load and run this example, select the Load example button. This action will copy all associated files to your current working directory. Select the DeckBuild run button to execute the example .