Tuning Threshold Voltage using Seg.0 and Theta.0

ancaex05.in : Tuning Threshold Voltage using Seg.0 and Theta.0

Requires: SSuprem 4
Minimum Versions: Athena 5.21.2.R

This example demonstrates how physical parameters related to silicon/oxide interface can be used for the tuning of threshold voltage of a MOS structure. A simplified 1D simulation of an NMOS channel formation is considered. Two parameters are used for the Vt calibration: Seg.0 , which is the prefactor of boron segregation coefficient on the silicon /oxide interface, and theta.0 which is the prefactor of interstitial injection coefficient. Using DBInternal capability (see section DOE of the Deckbuild Examples), the simulation is repeated for 7 different values of Seg.0 and for 5 different theta.0. For each case the threshold voltage is extracted using QuickMOS 1dvt. The results are stored in the ancaex05.dat file for subsequent plotting of Vt vs theta.0 for different Seg.0 curves. Such curves could be used for selecting of appropriate segregation and interstitial injection coefficients.

To load and run this example, select the Load example button. This action will copy all associated files to your current working directory. Select the DeckBuild run button to execute the example.