2 keV Arsenic Implant/Diffusion Simulation Using PLS Model

advdifex07.in : 2 keV Arsenic Implant/Diffusion Simulation Using PLS Model

Requires: SSuprem 4 with DIFSIM Module
Minimum Versions: Athena 5.21.2.R

Arsenic implantation is performed with an energy of 2 keV at a dose of 1E15 at/cm^2 and followed by a RTA at 1000C during 10 seconds. All characteristics of arsenic diffusion have been taken into account i.e.:

- Arsenic migrates both via interstitial and vacancy mechanisms with approximately the same proportion;

- Arsenic atoms form with vacancy any clusters As2V or As4V;

- Above the solid solubility limit, most of the arsenic quickly precipitates which implies an inactivation and an immobilization for most of the dopant at high concentration.

The inititial interstitial profile generated by the arsenic implant is modeled though a simple 'plus one' model.

To activate the new advanced diffusion model, specify PLS IC DCC SS in the method statement before the diffusion step to take into account Classical Dopant Diffusion, IC, arsenic clusters and solid solubility models.

To load and run this example, select Load example button. This action will copy all associated files to your current working directory. Select the Deckbuild run button to execute the example.