20 keV Implant/Diffusion Simulation Using PLS Model

advdifex04.in : 20 keV Implant/Diffusion Simulation Using PLS Model

Requires: SSuprem 4 with DIFSIM Module
Minimum Versions: Athena 5.21.2.R

Once the validity of the entire PLS diffusion model has been proved using specific experiments, simulations of relevant modern silicon technologies are considered.

Boron implantation at 20 keV is widely used in silicon technologies. Since the experiment setup involves low temperature such as 800C, the effects of boron immobilization and desactivation at high concentration take place. Thus, the three parts of the PLS model have to be used.

A comparison between chemical and electrically active boron concentration shows that even below the solid solubility, most of the dopant stay inactive due to the formation of mixed dopant-defect clusters (BIC) at high concentrations. By comparing resuls obtained with only CDD or IC model with the full PLS (IC + DDC), it can be concluded that this type of cluster also consumes free interstitials which leads to reduction of the boron diffusion.

This proves one more time that all three parts of the model: classical, interstitial clusters, and mixed dopant-defect clusters, are needed to accurately simulate the post-implant diffusion.

The initial interstitial profile generated by the boron implant is modeled though a "+1" model.

To activate the new advanced diffusion model, specify PLS IC DDC in the METHOD statement before the diffusion step to take into account CDD, IC and BIC models.

To load and run this example, select Load example button . This action will copy all associated files to your current working directory. Select the Deckbuild run button to execute the example.