Predeposition Simulation Using PLS Model

advdifex01.in : Predeposition Simulation Using PLS Model

Requires: SSuprem 4 with DIFSIM Module
Minimum Versions: Athena 5.21.2.R

This example shows the ability of the advanced diffusion model to handle the complex couplings between boron and free point defects.

Although not corresponding to the modern deep sub-micron technologies, this simulation is representative of the high dopant concentration features which reveal the complex couplings between dopant and point defects . It is therefore considered a meaningful basic test for any advanced diffusion model.

Even if this model has been developed for state of the art technologies, it stills can be used as the standard diffusion model for any diffusion step. For example, in the case of buried layer formation, the TED phenomena become irrelevant. So only the Classical Dopant Diffusion (CDD) part of the advanced diffusion model can be used while Interstitial Clusters (IC) and Defect-Dopant Clusters (DDC) models can be ignored.

To activate the new advanced diffusion model, specify PLS in the METHOD statement before the diffusion step. Then, only the SDD part is activated.

To load and run this example, select Load example button. This action will copy all associated files to your current working directory. Select the Deckbuild run button to execute the example.