Schottky Diode Forward Characteristic

diodeex01.in : Schottky Diode Forward Characteristic

Requires: S-Pisces
Minimum Versions: Atlas 5.22.1.R

This example demonstrates simulation of a Schottky Diode Forward Characteristic. It shows:

  • Formation of a diode structure using Atlas syntax
  • Setting of Schottky barrier height for the anode
  • Forward biasing the anode

In the first part of the input file the device is described, including mesh, electrodes locations, and doping distribution. This is a 2D n-type device with heavily doped floating p-type guard ring regions, located at the left and right sides of the structure. The Schottky anode is located at the top of the device, and a heavily doped cathode is located at the bottom of the device.

After the device description, the model statement is used to specify the following set of models : carrier concentration dependent mobility (ccsmob) , field dependent mobility, band-gap narrowing, SRH and Auger recombination. The two carrier model is specified here as well (carriers=2).

The key statement for setting a Schottky contact is contact name=<char> work=<val> . It is used to specify the workfunction of the Schottky electrode. In this example, since the substrate is n-type silicon with an affinity of 4.17, the specified workfunction of 4.97 provides a Schottky-barrier height of 0.8V. The default barrier height is zero (a perfect ohmic contact). This condition is assumed for the cathode.

The electrical simulation simply ramps the anode voltage to 1.0V in 0.05V steps using the solve statement. The results of the simulation are then displayed using TonyPlot.

To load and run this example, select the Load example button in DeckBuild. This will copy the input file and any support files to your current working directory. Select the run button to execute the example.