Stresses in a Buried-SiGe Strained-Silicon MOSFET. Part 2.

anstex03.in : Stresses in a Buried-SiGe Strained-Silicon MOSFET. Part 2.

Requires: SSuprem 4 Minimum Versions: Athena 5.21.2.R

This example is similar to the previous example anstex02.in. There are three main differences:

1. This example demonstrates the use of the STRESS.HIST method instead of several STRESS statements.

2. It calculates dopant induced intrinsic stresses based on Germanium fraction in Silicon instead of user-defined intrinsic stresses in the SiGe layer. This is achieved by specifying DOPANT.STRESS parameter in the METHOD statement.

3. It uses more realistic angled etching of source/drain area.

Two additional process parameters, Ge_fraction and etch_angle, are introduced. These parameters could be used for further optimization of the process. It is interesting to note that if a realistic 70-75 degrees etch is applied the stress transfer efficiency (see previous example) could be increased by 12-15% in some cases.

The results of the calculation are plotted using TonyPlot to display 2D contours of the XX component of stress in the final structure.

To load and run this example, select the Load example button. This action will copy all associated files to your current working directory. Select the DeckBuild run button to execute the example.