Trench Sidewall Oxidation with Orientation Dependence

anoxex09.in : Trench Sidewall Oxidation with Orientation Dependence

Requires: SSuprem 4
Minimum Versions: Athena 5.21.2.R

This example shows that the orientation of the wafer will affect the growth rate of an oxide on trench sidewalls. The orientation od the substrate is specified by init orientation=xyz . xyz willbe 100, 110 or 111. The rotation of the substrate is specified by the parameter rot.sub

The method statement parameters GRID.OX and GRIDINIT.OX are used to improve the grid within the grown oxide layer. The thicknesses of sidewall oxide are extracted for all cases.

To load and run this example, select the Load example button. This action will copy all associated files to your current working directory. Select the DeckBuild run button to execute the example.