Doping Dependent Oxidation Rate

anoxex03.in : Doping Dependent Oxidation Rate

Requires: SSuprem 4
Minimum Versions: Athena 5.21.2.R

This example shows the effect of dopant in silicon on oxidation rate. High levels of phosphorus (>1e20) accelerate the oxidation rate on the substrate.

No special model commands are required to activate dopant dependent oxidation. The parameter grid.ox controls the gridding in the grown oxide.

To load and run this example, select the Load example button. This action will copy all associated files to your current working directory. Select the DeckBuild run button to execute the example.