CCD Structure Formation

amex06.in : CCD Structure Formation

Requires: SSuprem 4
Minimum Versions: Athena 5.21.2.R

In this example, a CCD structure is constructed using Athena. This structure can be passed to ATLAS for electrical testing.

The first stage of the input constructs the CCD geometry and doping profiles in Athena. The CCD device consists of a storage node on the left of the structure controlled by a polysilicon gate. A transfer node to the right of this structure is also controlled by both a polysilicon gate and a drain region of heavy n+ doping with a metal contact.

The CCD structure has a n- active region at the surface above a p-type substrate. Under the transfer node an extra p-type implant is given. This implant is performed at sufficient dose level to create a potential difference between the storage and transfer nodes, but is not so large as to create a junction.

The process simulation is designed to run extremely quickly so there is a minimum of diffusion steps included. The final stages of the Athena input performs the electrode definition needed by ATLAS. Also some EXTRACT statements are used to measure the junction depth of the active region under the storage and transfer nodes.

To load and run this example, select the Load example button while this text is displayed. The input file and several support files will be copied to your current working directory at this time. Once loaded into DeckBuild, select the run button to execute the example.